Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus

ABSTRACT

A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2020-052042, filed Mar. 24, 2020, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device,a semiconductor device manufacturing method, and a semiconductor devicemanufacturing apparatus.

BACKGROUND

Three-dimensionally stacked nonvolatile memory devices have beendeveloped. In the three-dimensionally stacked nonvolatile memory device,memory cells are three-dimensionally stacked in order to achieve highintegration of the semiconductor memory device. The three-dimensionallystacked nonvolatile memory device includes a stacked body that is formedaround a memory hole by stacking insulating films and conductive films.To increase the degree of integration of a memory device, it is desiredto increase the number of stacked layers by thinning the insulatingfilms and the conductive films of the stacked body. Use of ahigh-melting point metal, such as tungsten (W) or molybdenum (Mo), forthe conductive film is under study.

In view of these circumstances, to form such a conductive film by, e.g.,a chemical vapor deposition (CVD) method, lowering resistance of athinned conductive film is desired.

Examples of related art include U.S. Pat. No. 5,366,590 and U.S. Pat.No. 7,794,616.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a semiconductor device according toat least one embodiment.

FIG. 2 is a sectional view showing a manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 3 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 4 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 5 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 6 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 7 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 8 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 9 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 10 is a sectional view showing the manufacturing process of thesemiconductor device of at least one embodiment.

FIG. 11 shows a schematic configuration of a semiconductor devicemanufacturing apparatus of at least one embodiment.

FIGS. 12A and 12B are sectional views showing an example of a primarypart of the semiconductor device manufacturing apparatus shown in FIG.11.

FIG. 13 shows another configuration of the semiconductor devicemanufacturing apparatus of at least one embodiment.

FIG. 14 shows yet another configuration of the semiconductor devicemanufacturing apparatus of at least one embodiment.

FIG. 15 is a sectional view showing another example of the primary partof the semiconductor device manufacturing apparatus shown in FIG. 11.

FIG. 16 is a view of the primary part of the semiconductor devicemanufacturing apparatus shown in FIG. 15, as viewed through an uppersurface.

FIG. 17 is a view of another example of the primary part of thesemiconductor device manufacturing apparatus shown in FIG. 11, as viewedthrough an upper surface.

FIG. 18 is a view of yet another example of the primary part of thesemiconductor device manufacturing apparatus shown in FIG. 11, as viewedthrough the upper surface.

DETAILED DESCRIPTION

At least one embodiment provides a semiconductor device including aconductive film using a high-melting point metal with loweredresistance, a semiconductor device manufacturing method, and asemiconductor device manufacturing apparatus.

In general, according to at least one embodiment, a semiconductor deviceincludes a conductive film containing molybdenum and a metal element,the metal element having a melting point lower than the melting point ofmolybdenum. The metal element forms a complete solid solution withmolybdenum.

Hereinafter, embodiments of a semiconductor device, a semiconductordevice manufacturing method, and a semiconductor device manufacturingapparatus will be described with reference to the drawings. It is notedthat substantially the same constitutional parts are denoted by the samereference signs and descriptions thereof may be partially omitted ineach embodiment. The drawings are schematic, and a relationship betweena thickness and a plane dimension, a ratio of thickness of parts, andother relationships may differ from actual values.

Semiconductor Device

A semiconductor device of at least one embodiment is, for example, asemiconductor storage device having a memory cell array. FIG. 1 is asectional view showing a memory cell of a semiconductor device 1 of atleast one embodiment. The semiconductor device 1 shown in FIG. 1includes a semiconductor substrate 10, a stacked body 20 provided abovethe semiconductor substrate 10, and a columnar part 30 extending alongthe stacked direction of the stacked body 20. In FIG. 1, two directionsthat are orthogonal to each other while being parallel to a main surfaceof the semiconductor substrate 10 are respectively defined as an Xdirection and a Y direction, and a direction intersecting both of theseX direction and Y direction is defined as a Z direction, which is thestacked direction.

The semiconductor substrate 10 includes a diffusion layer 11 that is tobe coupled to a select transistor. The stacked body 20 is provided abovethe semiconductor substrate 10 having the diffusion layer 11, via aninterlayer insulating film 12. The stacked body 20 includes multipleconductive films 21 and multiple insulating films 22. These conductivefilms 21 and insulating films 22 are alternately stacked in the Zdirection. As detailed later, a molybdenum (Mo) alloy film having a filmthickness of approximately 30 nm is used as the conductive film 21. Asilicon oxide film having a film thickness of approximately 30 nm isused as the insulating film 22.

Although details are described later, the conductive film 21 is formedas follows: silicon oxide films as the insulating films 22 and siliconnitride films are alternately stacked, the silicon nitride films arethen selectively etched to form spaces, and these spaces are filled withMo alloy by, e.g., a CVD method. Herein, the chemical vapor deposition(CVD) method includes not only commonly used methods such as a metalorganic (MO) CVD method and a plasma CVD method, but also an atomiclayer deposition (ALD) method.

The columnar part 30 penetrates through the stacked body 20 in the Zdirection and has an outer circumferential part 31 a. The columnar part30 is formed in such a manner as to reach the diffusion layer 11, whichis provided in the semiconductor substrate 10. The columnar part 30 hasa metal-oxide-nitride-oxide-silicon (MONOS) structure. Specifically, analumina film as a block insulating film 32, a silicon nitride film as anelectric charge storage film 33, a silicon oxide film as a tunnelinsulating film 34, and a silicon film as a channel film 35 are formedin order from the stacked body 20 side, along the outer circumferentialsurface 31 a of the columnar part 30.

A silicon film 36 is formed inside the channel film 35, and a siliconoxide film is formed inside the silicon film 36 as an insulating film37. The silicon film 36 has a protrusion 31 b that extends in the Zdirection, in order to electrically connect the channel film 35 to thediffusion layer 11. The block insulating film 32, the electric chargestorage film 33, and the tunnel insulating film 34 constitute a memoryfilm 38. The channel film 35 and the silicon film 36 constitute asemiconductor film 39.

The conductive films 21, the memory film 38, and the semiconductor film39 constitute multiple memory cells MC arranged in the Z direction. Thememory cell MC has a vertical transistor structure with the conductivefilm 21 surrounding the semiconductor film 39 via the memory film 38.The semiconductor film 39 functions as a channel of the memory cell MChaving the vertical transistor structure. The conductive film 21functions as a control gate or a control electrode. The electric chargestorage film 33 functions as a data storage layer that stores electriccharges injected from the semiconductor film 39.

The conductive film 21 of the stacked body 20 is made of Mo alloy, asdescribed above. The Mo alloy that is used in the conductive film 21contains Mo and a metal element, which may be hereinafter described asan “M element”. Herein, the metal element M is an element having amelting point lower than that of Mo and forming a complete solidsolution with Mo. At least one selected from the group consisting oftitanium (Ti), vanadium (V), and niobium (Nb) is used as such a metalelement or an M element. The M element is contained preferably in anamount of 5 atomic % or less, or more preferably, in an amount of 1atomic % or less, with respect to the total amount of Mo and the Melement. It is noted that the complete solid solution is a solidsolution containing two kinds of metal elements that are meltable at anycomposition in each of a liquid phase and a solid phase.

In the semiconductor device or three-dimensionally stacked nonvolatilememory device 1 having the memory cell MC with the vertical transistorstructure, it is effective to increase the number of stacked layers ofthe conductive films 21 and the insulating films 22, in order toincrease the degree of integration. As the number of stacked layersincreases, the stacked thickness of the stacked body 20 increases. Inview of this, thinning the conductive film 21 is desired in order toreduce dimensions and thickness of the semiconductor device 1 as adevice. However, decreasing the film thickness of the conductive film 21causes increase in resistance, and therefore, a conductive material withlow resistivity is preferably used. An existing memory cell MC usestungsten (W) or molybdenum (Mo) for the conductive film. Mo is amaterial having a resistivity lower than that of W and exhibiting lowresistance when in the form of a thin film. However, Mo is ahigh-melting point metal as in the case of W, and thus, crystallizationdoes not sufficiently progress in a forming temperature range of 400 to800° C. in forming using, e.g., a CVD method. As a result, the grainsize tends to be small, and a thin film of, for example, 30 nm or less,has a high resistivity.

It is effective to lower the melting point of a material in order toaccelerate crystallization and increase a grain size. For these reasons,in the semiconductor device 1 of at least one embodiment, at least one Melement selected from the group consisting of Ti, V, and Nb is added toMo, as a metal element having a melting point lower than that of Mo,whereby the melting point of the Mo alloy as a material for composingthe conductive film 21 is lowered. Moreover, each of Ti, V, and Nb,which forms a complete solid solution with Mo, does not cause phaseseparation of the Mo alloy and reduces electron scattering and otherundesirable phenomenon due to precipitates.

As shown in a Mo—Ti phase diagram, a Mo—V phase diagram, and a Mo-Nbphase diagram in Desk Handbook “Phase Diagram for Binary Alloys”, thesecond edition (ASM Handbooks 2010/12/15), it is clear that an alloythat is made by adding a M element to Mo forms a complete solid solutionand has a melting point lowered by the added M element. Thus, the addedelement, that is, the M element, prevents increase in electricresistance of the conductive film 21. Moreover, Ti, V, or Nb forms analloy layer without generating a hetero phase, whereby lowering of themelting point of Mo can be freely designed.

Addition of at least one element of Ti, V, and Nb to Mo lowers themelting point. The grain size increases with increase in the additionamount in a forming temperature range of 300 to 700° C. of the Mo alloy.On the other hand, Mo has a resistivity of 53.4 nOhm·m, whereas each ofTi, V, and Nb has a resistivity higher than that of Mo such that Ti hasa resistivity of 420 nOhm·m, V has a resistivity of 197 nOhm·m, and Nbhas a resistivity of 152 nOhm·m. Thus, the resistivity of the Mo alloyrises as the concentration of Ti, V, or Nb increases. This contraryeffect tends to cause a rise in resistivity when the concentration ofTi, V, or Nb exceeds a certain degree, although the resistivity is oncedecreased with increase in grain size due to addition of Ti, V, or Nb toMo.

For example, the resistivity of the Mo alloy is lower than that of Mo inan amount of 100% when the amount of V added to Mo is 5 atomic %, butthe resistivity is close to that of Mo in an amount of 100% when theaddition amount of V is 30%. From this point of view, the amount of Vadded to Mo is preferably 5 atomic % or less. This also applies to Tiand Nb, and the addition amount of each of Ti and Nb is preferably 5atomic % or less. Also when two or more elements selected from among Ti,V, and Nb are added to Mo, the total addition amount is preferably 5atomic % or less. Moreover, the amount of the M element added to Mo ismore preferably 1 atomic % or less. The lower limit of the additionamount of the M element is not specifically limited. For example, on thecondition that the M element in the amount able to be detected by atomprobe is contained, the effect for lowering the melting point isobtained in accordance with the addition amount, whereby the effect forincreasing the grain size and the effect for reducing the resistivityare obtained accordingly.

Semiconductor Device Manufacturing Method And Semiconductor DeviceManufacturing Apparatus

Next, a method for manufacturing the semiconductor device 1 of theembodiment will be described with reference to FIGS. 2 to 10. First, asshown in FIG. 2, silicon nitride films 21X and silicon oxide films 22having a film thickness of approximately 30 nm as insulating films 22are alternately deposited above a semiconductor substrate 10 having adiffusion layer 11, via an interlayer insulating film 12, by a CVDmethod, whereby a stacked body 20X is formed. In one example, 24 layersof the silicon nitride films 21X and 24 layers of the insulating films22 are deposited. Next, as shown in FIG. 3, a memory hole 31 a is formedin the stacked body 20X in the stacked direction, which is the Zdirection, by using a lithography method. The diameter of the memoryhole 31 a is, for example, 80 nm.

Then, as shown in FIG. 4, an aluminum oxide film as a block insulatingfilm 32, a silicon nitride film as an electric charge storage film 33, asilicon oxide film as a tunnel insulating film 34, a polysilicon film asa channel film 35, and a silicon oxide film as a side wall film 40 aresequentially deposited in the memory hole 31 a.

As shown in FIG. 5, a lower part of each of the films 32, 33, 34, and 35and the interlayer insulating film 12 may be etched by a reactive ionetching (RIE) method while the side wall film 40 is used as a mask,whereby the diffusion layer 11 is exposed. Subsequently, the side wallfilm 40 as the mask may be etched by selective RIE to expose the channelfilm 35, which is the polysilicon film. As shown in FIG. 6, apolysilicon film 36 is deposited along an inner wall of the channel film35, whereby the channel film 35 is electrically connected to thediffusion layer 11. Then, as shown in FIG. 7, a silicon oxide film isembedded in a hole inside the polysilicon film 36, as an insulating film37.

Next, as shown in FIG. 8, a slit 41 is formed in the stacked body 20X byusing a lithography method and an RIE method. As shown in FIG. 9, thesilicon nitride films 21X are etched through the slit 41 by phosphoricacid that is heated to 150° C., to form spaces S for forming conductivefilms 21. As shown in FIG. 10, these spaces are filled with Mo alloy by,e.g., a CVD method, to form the conductive films 21, whereby a stackedbody 20 is obtained. Then, after the Mo alloy at a region that does notneed the Mo alloy is removed, and a silicon oxide film is embeddedthereat, and upper wiring and other members, which are not shown in thedrawing, are formed. Thus, a semiconductor device or athree-dimensionally stacked nonvolatile memory device 1 is manufactured.The process for forming the Mo alloy is detailed below.

A MoV alloy is formed by, for example, a CVD method. First, (1) a Mofilm is deposited by using MoF₆ and H₂, and (2) a V film is deposited byusing VC1 ₄ and H₂. Thereafter, the film deposition process (1) for theMo film and the film deposition process (2) for the V film are repeated.Then, a heat treatment is performed in an Ar atmosphere, whereby a MoValloy is formed. Thus, the MoV alloy is embedded in the space S of thestacked body.

A method of forming the MoV alloy by using a mixed gas of MoCl₅ and VC1₄ and H₂ may be performed instead of the deposition method describedabove. A condition for supplying MoCl₅ and VCl₄ at a partial pressureratio (P_(Mo)/P_(v)) of 10 to 100 is employed, and the mixed gas ofMoCl₅ and VC1 ₄ and H₂ are alternately supplied to a reaction furnace toform the MoV alloy. The MoV alloy may be formed by supplying MoCl₅,VCl₄, and H₂ at the same time, depending on the shape of the space S.Instead of fluorides and chlorides, other halides, carbonyl compounds,amino compounds, etc., may also be used as raw materials of Mo and V.

In a case of using a MoNb alloy as the Mo alloy, the MoNb alloy isformed by, for example, a CVD method, as follows. (1) A Mo film isdeposited by using MoF₆ and H₂, and then, (2) a Nb film is deposited byusing NbCl₅ and H₂. Thereafter, the film deposition process (1) for theMo film and the film deposition process (2) for the Nb film are repeatedmultiple times. Then, a heat treatment is performed in an Ar atmosphere,whereby a MoNb alloy is formed. Alternatively, the MoNb alloy may beformed by using a mixed gas of MoCl₅ and NbCl₅ and H₂. In this case,adjustment is performed so that a partial pressure ratio (P_(Mo)/P_(Nb))of MoCl₅ and NbCl₃ will be 10 to 100. In addition, halides other thanthose described above, carbonyl compounds, amino compounds, etc., mayalso be used as raw materials of Mo and Nb. For example, Mo (CO)₆ may beused instead of MoF₆ or MoCl₅.

In a case of using a MoTi alloy as the Mo alloy, the MoTi alloy isformed by, for example, a CVD method, as follows. (1) A Mo film isdeposited by using MoF₆ and H₂, and then, (2) a Ti film is deposited byusing TiCl₄ and H₂. Thereafter, the film deposition process (1) for theMo film and the film deposition process (2) for the Ti film are repeatedmultiple times. Then, a heat treatment is performed in an Ar atmosphere,whereby a MoTi alloy is formed. Alternatively, the MoTi alloy may beformed by using a mixed gas of MoCl₅ and TiCl₄ and H₂. In this case,MoCl₅ and TiCl₄ are supplied by adjusting a partial pressure ratio(P_(Mo)/P_(Ti)) to 10 to 100, and the MoTi alloy is formed by using areaction with H₂. A compound containing Si, such as SiH₄, or a compoundcontaining P, such as PH₃, may be used in addition to H₂. This compoundmay be added to H₂ in order to reduce MoCl₅ and TiCl₄, whereby the MoTialloy may be formed. In addition, halides other than those describedabove, carbonyl compounds, amino compounds, etc., may also be used asraw materials of Mo and Ti.

In the methods described above, for example, MoCl₅, NbCl₅, VCl₄, and Mo(CO)₆ are supplied in a solid state to a raw material supply part 120.In the case of using such a solid raw material, the following filmdeposition apparatus is preferably used as a semiconductor devicemanufacturing apparatus. FIG. 11 shows a schematic configuration of afilm deposition apparatus employing a CVD method. A film depositionapparatus 100 includes a film deposition chamber 110 and the rawmaterial supply part 120. The film deposition chamber 110 and the rawmaterial supply part 120 are coupled via a gas supply pipe 101. A heater102 is provided around the gas supply pipe 101 so as to preventsolidification of raw material gas that is gasified in the raw materialsupply part 120. The gas supply pipe 101 is provided with a gas flowcontroller or MFC 103 that adjusts a flow rate of the raw material gasand then sends the raw material gas to the film deposition chamber 110.The film deposition chamber 110 has a pump 111 so that the pressure inthe film deposition chamber 110 can be controlled to a predeterminedpressure. Although not shown in the drawing, the film deposition chamber110 has a holding table for a substrate, an electrode, a power source,and other components.

The raw material supply part 120 has a raw material container 121. Theraw material container 121 has a heater 122 that is provided along aninner wall, as shown in FIGS. 12A and 12B. The heater 122 is configuredto be able to heat a lower part, an upper part, and a middle part of theraw material container 121 to different temperatures. In one example,the lower part of the raw material container 121 is heated to 150° C.,the middle part of the raw material container 121 is heated to 130° C.,and the upper part of the raw material container 121 is heated to 160°C. The upper part of the raw material container 121 is coupled to an endof the gas supply pipe 101. Among raw materials of films to be depositedby a CVD method, a solid raw material 123 is placed in the raw materialcontainer 121. In the case of depositing the MoV alloy of the foregoingembodiment by the film deposition apparatus 100, MoCl₅ or VCl₄ is placedin the raw material container 121, as the solid raw material 123. Theraw material of the M element may be placed in a raw material container121 that is different from the raw material container 121 for a rawmaterial of Mo or may be placed in the raw material container 121 forthe raw material of Mo, in accordance with the film deposition process.Specifically, although FIG. 11 shows only one raw material container121, in the case of placing the raw material of Mo and the raw materialof the M element in different raw material containers, a first rawmaterial container 121A and a second raw material container 121B areused, as shown in FIG. 13. The first raw material container 121Acontains a solid raw material of Mo. The second raw material container121B contains a solid raw material of the M element. In the case ofplacing the raw material of Mo and the raw material of the M element inthe same raw material container, one raw material container 121containing the solid raw material of Mo and the solid raw material ofthe M element is used. A raw material except for the solid raw material,such as a gas raw material, is supplied to the film deposition chamber110 through another supply pipe 101C, as shown in FIG. 14.

The solid raw material 123 that is placed in the raw material container121 is heated by the heater 122 to be sublimated, and the vaporizedcomponent is sent to the film deposition chamber 110 as a raw materialgas. As the volume of the solid raw material 123 is decreased byheating, the surface area of the solid raw material 123 varies, and theheat may be barely transmitted from the heater 122 to the solid rawmaterial 123. This causes unstable supply of the raw material gas fromthe solid raw material 123. This feature of the solid raw material 123greatly differs from that of a liquid raw material. The heattransmission from the heater 122 is uniform even when gasification of aliquid raw material advances, whereas the heat transmission from theheater 122 may become not uniform as gasification of a solid rawmaterial advances. In consideration of this, the film depositionapparatus 100 of at least one embodiment has a movable plate-shaped lid124 and a weight 125. The lid 124 is configured to be put directly on atop of the solid raw material 123. The weight 125 is configured to applya load to the solid raw material 123 via the lid 124. The weight 125functions as a mechanism for applying a load to the solid raw material123. Each of the lid 124 and the weight 125 uses, for example, stainlesssteel (SUS), or corrosion-resistant nickel alloy, such as Hastelloy orInconel.

Specifically, as shown in FIG. 12A, the lid 124 is put on the top of thesolid raw material 123 that is placed in the raw material container 121,and the weight 125 is also put on the lid 124 to apply a load to thesolid raw material 123. The solid raw material 123 is contained in theraw material container 121 in the form of, for example, powder. In theseconditions, the heater 122 is operated to heat the solid raw material123, thereby vaporizing the solid raw material 123. At this time, theheater 122 may perform heating while generating a temperaturedistribution in such a manner that a bottom part of the raw materialcontainer 121 is heated to have a temperature higher than that of themiddle part of the raw material container 121. The vaporized componentof the solid raw material 123 is introduced into the film depositionchamber 110 via the gas supply pipe 101. The amount of introduction ofthe vaporized component to the film deposition chamber 110 is controlledby the gas flow controller 103. While the vaporization of the solid rawmaterial 123 advances, and the volume of the solid raw material 123decreases, the solid raw material 123 is applied with a load by theweight 125 via the lid 124, as shown in FIG. 12B. This enables securinga contact area between the solid raw material 123 and the heater 122,whereby heat can be uniformly transmitted to the solid raw material 123.Thus, vaporization of the solid raw material 123 is stably performed. Asdescribed above, the film deposition apparatus 100 of the embodimentenables stably performing film deposition using the solid raw material123, for example, film deposition of a Mo alloy using a solid rawmaterial of the Mo alloy.

As shown in FIGS. 15 and 16, the raw material container 121 may have aguide bar 126 as a guide member, in order to stabilize the contact stateof the lid 124 to the solid raw material 123. In using the guide bar126, a through hole 127 for inserting the guide bar 126 is provided inthe lid 124. That is, movement of the lid 124 is limited by the guidebar 126 so that the lid 124 will be prevented from deviating from theplaced position in accordance with decrease in volume of the solid rawmaterial 123. Thus, movement of the lid 124 in accordance with decreasein volume of the solid raw material 123 is guided by the guide bar 126,whereby the contact state of the lid 124 to the solid raw material 123and the state of applying a load to the solid raw material 123 via thelid 124 by the weight 125 can be further stabilized. As a result,deposition is more stably performed by using the solid raw material 123.

Moreover, to send the vaporized component of the solid raw material 123,which is generated by heating, to the gas supply pipe 101, the lid 124may be provided with a through hole 128 for allowing the vaporizedcomponent to pass through, as shown in FIG. 17. This enables thevaporized component of the solid raw material 123 under the lid 124 tobe efficiently sent to the gas supply pipe 101 via the through hole 128of the lid 124. The through hole 128 for allowing the vaporizedcomponent to pass through may also be provided to the weight 125. Thelid 124 and the weight 125 that are able to apply loads to the solid rawmaterial 123 may be variously modified. In one example, as shown in FIG.18, lids 124A and 124B that are multiple separated parts may be used. Inthis case, weights 125A and 125B are respectively put on the lids 124Aand 124B. The mechanism for applying a load to the solid raw material123 via the lid 124 is not limited to the weight 125 and may be, e.g.,an elastic body such as a spring.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosure. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of thedisclosure. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a conductivefilm containing molybdenum and a metal element, the metal element havinga melting point lower than a melting point of molybdenum, the metalelement forming a complete solid solution with molybdenum.
 2. Thesemiconductor device according to claim 1, wherein the metal element isat least one selected from the group consisting of titanium, vanadium,and niobium.
 3. The semiconductor device according to claim 1, whereinthe metal element is contained in an amount of 5 atomic % or less withrespect to a total amount of molybdenum and the metal element.
 4. Thesemiconductor device according to claim 3, wherein the metal element iscontained in an amount of 1 atomic % or less with respect to a totalamount of molybdenum and the metal element.
 5. The semiconductor deviceaccording to claim 1, comprising: a stacked body having a plurality ofthe conductive films alternately stacked with insulating films; and acolumnar part provided in the stacked body along a stacked direction ofthe stacked body, wherein the columnar part has a semiconductor film,and an electric charge storage film disposed between the semiconductorfilm and the plurality of the conductive films.
 6. The semiconductordevice according to claim 5, wherein the conductive films are arrangedas one of a control gate or a control electrode.
 7. A method formanufacturing a semiconductor device, comprising: forming a conductivefilm by a chemical vapor deposition (CVD) method using (i) a solid rawmaterial containing molybdenum, or (ii) a solid raw material containinga metal element, or (iii) both, the conductive film containingmolybdenum and the metal element, the metal element having a meltingpoint lower than the melting point of molybdenum, and the metal elementforming a complete solid solution with molybdenum.
 8. The method formanufacturing the semiconductor device according to claim 7, comprising:forming a stacked body having a plurality of the conductive filmsalternately stacked with insulating films; and forming a columnar partin a hole in the stacked body along a stacked direction of the stackedbody, the columnar part having a semiconductor film and an electriccharge storage film disposed between the semiconductor film and theplurality of the conductive films.
 9. The method for manufacturing thesemiconductor device according to claim 7, wherein the formation of theconductive film includes: supplying a solid raw material of molybdenumor of the metal element to a raw material container; placing a movablelid on the solid raw material in the raw material container, and thenheating the solid raw material; and forming the conductive film by a rawmaterial gas generated in the raw material container by the heating. 10.The method for manufacturing the semiconductor device according to claim7, wherein the conductive film is an alloy of molybdenum and the metalelement.
 11. The method for manufacturing the semiconductor deviceaccording to claim 7, wherein the metal element is at least one selectedfrom the group consisting of titanium, vanadium, and niobium.
 12. Themethod for manufacturing the semiconductor device according to claim 7,wherein the CVD method alternately forms films of molybdenum and themetal element, and further comprising annealing the films of molybdenumand the metal element to form an alloy.
 13. The method for manufacturingthe semiconductor device according to claim 7, wherein the CVD methodcomprises at least one of a metal organic (MO) CVD method, a plasma CVDmethod, or an atomic layer deposition (ALD) method.
 14. A semiconductordevice manufacturing apparatus comprising: a raw material supply partincluding a raw material container arranged to contain a solid rawmaterial, a heater arranged relative to the raw material container so asto heat the solid raw material, a lid movable on the solid raw material,and a load applying a load to the solid raw material via the lid; and afilm deposition chamber arranged to receive a vaporized component of thesolid raw material from the raw material supply part and configured toform a film by the vaporized component.
 15. The semiconductor devicemanufacturing apparatus according to claim 14, wherein the raw materialcontainer is configured to contain one or both of a solid raw materialof molybdenum or a solid raw material of a metal element as the solidraw material, the metal element having a melting point lower than themelting point of molybdenum and forming a complete solid solution withmolybdenum.
 16. The semiconductor device manufacturing apparatusaccording to claim 14, wherein the raw material supply part includes aguide arranged to control movement of the lid, and the lid includes athrough hole through which the guide is configured to be inserted. 17.The semiconductor device manufacturing apparatus according to claim 16,wherein the guide comprises an elongated guide bar arranged to extendthrough the through hole.
 18. The semiconductor device manufacturingapparatus according to claim 16, wherein the lid comprises multiplelids.